Low stress hard coatings and applications thereof

ABSTRACT

In one aspect, coated cutting tools are described herein comprising a substrate and a coating comprising a refractory layer deposited by physical vapor deposition adhered to the substrate, the refractory layer comprising M 1−x Al x N wherein x≥0.68 and M is titanium, chromium or zirconium, the refractory layer including a cubic crystalline phase and having hardness of at least 25 GPa.

RELATED APPLICATION DATA

The present application is a continuation application of U.S. patentapplication Ser. No. 15/210,566 filed Jul. 14, 2016, which is a divisionapplication of U.S. Pat. No. 9,896,767, which is a continuation-in-partof U.S. Pat. No. 9,168,664, each of which is incorporated herein byreference in its entirety.

FIELD

The present invention relates to hard refractory coatings for cuttingtools and wear parts and, in particular, to refractory coatingsdeposited by physical vapor deposition demonstrating high thickness,high hardness and low stress.

BACKGROUND

One or more layers of refractory material are often applied to cuttingtool surfaces by physical vapor deposition (PVD) techniques to increaseproperties including wear resistance, performance and lifetime of thecutting tool. Titanium nitride (TiN) coatings, for example, are commonlyapplied by PVD to cemented carbide cutting tool substrates. However, TiNbegins oxidation at about 500° C. forming rutile TiO₂, thereby promotingrapid coating deterioration. Incorporation of aluminum into the cubiclattice can slow degradative oxidation of a TiN coating by forming aprotective aluminum-rich oxide film at the coating surface.

While providing enhancement to high temperature stability, aluminum canalso induce structural changes in a TiN coating having a negative impacton coating performance. Increasing amounts of aluminum incorporated intoa TiN coating can induce growth of hexagonal close packed (hcp) aluminumnitride (AlN) phase, altering the crystalline structure of the coatingfrom single phase cubic to a mixture of cubic and hexagonal phases.Aluminum content in excess of 70 atomic percent can further alter thecrystalline structure of the AlTiN layer to single phase hcp.Significant amounts of hexagonal phase can lead to a considerablereduction in hardness of AlTiN, resulting in premature coating failureor other undesirable performance characteristics. The inability tosufficiently control hexagonal phase formation has obstructed fullrealization of the advantages offered by aluminum additions to TiNcoatings.

Further, PVD coatings, including AlTiN, are limited in thickness due tohigh residual compressive stresses induced by ion bombardment during thedeposition process. Residual compressive stress only increases withcoating thickness rendering the coating susceptible to delamination orother adhesive failure modes. Bias voltage of the substrate can bereduced to mitigate residual compressive stress in PVD coatings.Nevertheless, reduction in bias voltages can significantly compromisecoating hardness. For example, in AlTiN and similar systems, reductionin bias voltage promotes hexagonal phase formation.

In view of these considerations, significant barriers exist to providingPVD coatings of AlTiN having high aluminum content, high hardness, highthickness and/or low residual compressive stress.

SUMMARY

In one aspect, solutions to the forgoing barriers are addressed hereinto provide cutting tools and wear parts PVD coatings having highaluminum content, high hardness, high thickness and/or low residualcompressive stress. For example, a coated cutting tool described herein,in some embodiments, comprises a substrate and a refractory layerdeposited by PVD adhered to the substrate, the refractory layercomprising M_(1−x)Al_(x)N wherein x≥0.4 and M is titanium, chromium orzirconium, the refractory layer having a thickness greater than 5 μm,hardness of at least 25 GPa and residual compressive stress less than2.5 GPa. Further, the refractory layer can have hexagonal phase contentgreater than 15 weight percent and up to 35 weight percent. As describedfurther herein, the refractory layer comprising M_(1−x)Al_(x)N can be asingle, monolithic layer or can be formed of a plurality of sublayers.

In another aspect, a coated cutting tool described herein comprises asubstrate and a coating comprising a refractory layer deposited byphysical vapor deposition adhered to the substrate, the refractory layercomprising M_(1−x)Al_(x)N wherein x≥0.68 and M is titanium, chromium orzirconium, the refractory layer including a cubic crystalline phase andhaving hardness of at least 25 GPa.

In another aspect, methods of making coated cutting tools are describedherein. A method of making a coated cutting tool, in some embodiments,comprises providing a substrate and depositing over a surface of thecutting tool substrate by cathodic arc deposition a coating comprising arefractory layer including M_(1−x)Al_(x)N wherein x≥0.4 and M istitanium, chromium or zirconium, the refractory layer having a thicknessgreater than 5 μm, a hardness of at least 25 GPa and a residualcompressive stress less than 2.5 GPa. In some embodiments, at least aportion of the refractory layer is deposited at a bias of less than −40V. For example, the bias can be in the range of −20 V to less than −40V.

In another embodiment, a method of making a coated cutting toolcomprises providing a cutting tool substrate and depositing a coatingover a surface of the substrate, the coating comprising a refractorylayer including M_(1−x)Al_(x)N wherein x≥0.64 and M is titanium,chromium or zirconium, the refractory layer having hardness of at least25 GPa, wherein the refractory layer is deposited with a cathodic arcdeposition apparatus comprising at least one anode having an annularextension.

In a further aspect, methods of making coated cutting tools describedherein can limit or control hexagonal phase formation in the depositedrefractory layer. In some embodiments, a method of making a coatedcutting tool comprises providing a substrate and depositing over asurface of the substrate by cathodic arc deposition a coating comprisinga refractory layer of M_(1−x)Al_(x)N wherein x≥0.4 and M is titanium,chromium or zirconium, wherein at least a portion of the refractorylayer is deposited at a bias of less than −40 V and hexagonal phase islimited in the refractory layer to 0-35 weight percent by using at leastone cathode target having a diameter less than about 80 mm.

Moreover, a method of making a coated cutting tool comprises providing asubstrate and depositing over a surface of the substrate by cathodic arcdeposition a coating comprising a refractory layer of M_(1−x)Al_(x)Nwherein x≥0.4 and M is titanium, chromium or zirconium, wherein at leasta portion of the refractory layer is deposited at a bias of less than−40 V and hexagonal phase is limited in the refractory layer to 0-35weight percent by reducing magnitude of one or more arc steeringmagnetic fields.

Further, a method of making a coated cutting tool comprises providing asubstrate and depositing over a surface of the substrate by cathodic arcdeposition a coating comprising a refractory layer includingM_(1−x)Al_(x)N wherein x≥0.4 and M is titanium, chromium, zirconium orzirconium, wherein at least a portion of the refractory layer isdeposited at a bias of less than −40 V and hexagonal phase is limited inthe refractory layer to 0-35 weight percent by depositing the refractorylayer as a plurality of sublayer groups, a sublayer group comprising acubic phase forming nanolayer and adjacent nanolayer of theM_(1−x)Al_(x)N .

Additionally, a method of making a coated cutting tool comprisesproviding a substrate and depositing over a surface of the substrate bycathodic arc deposition a coating comprising a refractory layer ofM_(1−x)Al_(x)N wherein x≥0.4 and M is titanium, chromium or zirconium,wherein at least a portion of the refractory layer is deposited at abias of less than −40 V and hexagonal phase is limited in the refractorylayer to 0-35 weight percent by depositing the refractory layer with acathodic arc apparatus including at least one anode having an annularextension.

These and other embodiments are described in greater detail in thedetailed description which follows.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cutting tool substrate according to one embodimentdescribed herein.

FIG. 2 is a schematic of a coated cutting tool according to oneembodiment described herein.

FIG. 3 is a schematic of a coated cutting tool according to oneembodiment described herein.

FIG. 4 is a cross-sectional schematic of an anode configurationemploying an annular extension according to one embodiment describedherein.

FIG. 5 is an X-ray diffractogram of a refractory coating according toone embodiment described herein.

FIG. 6 is an X-ray diffractogram of a refractory coating according toone embodiment described herein.

FIG. 7 is an X-ray diffractogram of a refractory coating according toone embodiment described herein.

FIG. 8 is an X-ray diffractogram of a refractory coating according toone embodiment described herein.

FIG. 9 illustrates non-limiting reference examples of PVD coatingflaking for determining critical load (L_(c)) according to embodimentsdescribed herein.

FIG. 10 is a schematic of a coated cutting tool according to oneembodiment described herein.

FIG. 11 is an X-ray diffractogram of a refractory coating according toone embodiment described herein.

DETAILED DESCRIPTION

Embodiments described herein can be understood more readily by referenceto the following detailed description and examples and their previousand following descriptions. Elements, apparatus and methods describedherein, however, are not limited to the specific embodiments presentedin the detailed description and examples. It should be recognized thatthese embodiments are merely illustrative of the principles of thepresent invention. Numerous modifications and adaptations will bereadily apparent to those of skill in the art without departing from thespirit and scope of the invention.

I. Coated Cutting Tools

In one aspect, a coated cutting tool described herein comprises asubstrate and a refractory layer deposited by PVD adhered to thesubstrate, the refractory layer comprising M_(1−x)Al_(x)N wherein x≥0.4and M is titanium, chromium or zirconium, the refractory layer having athickness greater than 5 μm, hardness of at least 25 GPa and residualcompressive stress less than 2.5 GPa. In some embodiments, x≥0.55 or≥0.6. Further, the refractory layer can have hexagonal phase contentgreater than 15 weight percent and up to 35 weight percent.

In another aspect, a coated cutting tool comprises a substrate and acoating comprising a refractory layer deposited by physical vapordeposition adhered to the substrate, the refractory layer comprisingM_(1−x)Al_(x)N wherein x≥0.68 and M is titanium, chromium or zirconium,the refractory layer including a cubic crystalline phase and havinghardness of at least 25 GPa.

Turning now to specific components, coated cutting tools describedherein comprise a substrate. A coated cutting tool can comprise anysubstrate not inconsistent with the objectives of the present invention.A substrate, in some embodiments, is an end mill, drill or indexablecutting insert. Indexable cutting inserts can have any desired ANSIstandard geometry for milling or turning applications. Substrates ofcoated cutting tools described herein can be formed of cemented carbide,carbide, ceramic, cermet or steel. A cemented carbide substrate, in someembodiments, comprises tungsten carbide (WC). WC can be present in acutting tool substrate in an amount of at least about 80 weight percentor in an amount of at least about 85 weight percent. Additionally,metallic binder of cemented carbide can comprise cobalt or cobalt alloy.Cobalt, for example, can be present in a cemented carbide substrate inan amount ranging from 3 weight percent to 15 weight percent. In someembodiments, cobalt is present in a cemented carbide substrate in anamount ranging from 5-12 weight percent or from 6-10 weight percent.Further, a cemented carbide substrate may exhibit a zone of binderenrichment beginning at and extending inwardly from the surface of thesubstrate.

Cemented carbide cutting tool substrates can also comprise one or moreadditives such as, for example, one or more of the following elementsand/or their compounds: titanium, niobium, vanadium, tantalum, chromium,zirconium and/or hafnium. In some embodiments, titanium, niobium,vanadium, tantalum, chromium, zirconium and/or hafnium form solidsolution carbides with WC of the substrate. In such embodiments, thesubstrate can comprise one or more solid solution carbides in an amountranging from 0.1-5 weight percent. Additionally, a cemented carbidesubstrate can comprise nitrogen.

A cutting tool substrate can comprise one or more cutting edges formedat the juncture of a rake face and flank face(s) of the substrate. FIG.1 illustrates a cutting tool substrate according to one embodimentdescribed herein. As illustrated in FIG. 1, the substrate (10) hascutting edges (12) formed at junctions of the substrate rake face (14)and flank faces (16). The substrate (10) also comprises an aperture (18)for securing the substrate (10) to a tool holder.

In addition to cutting tools, substrates can comprise wear parts ofvarying construction and application.

As described herein, a coating comprising a refractory layer depositedby PVD is adhered to the substrate, the refractory layer comprisingM_(1−x)Al_(x)N wherein x≥0.4 and M is titanium, chromium or zirconium,the refractory layer having a thickness greater than 5 μm, hardness ofat least 25 GPa and residual compressive stress less than 2.5 GPa.Alternatively, a coating comprising a refractory layer deposited by PVDis adhered to the substrate, the refractory layer comprisingM_(1−x)Al_(x)N wherein x≥0.68 and M is titanium, chromium or zirconium,the refractory layer including a cubic crystalline phase and hardness ofat least 25 GPa. In some embodiments, x of M_(1−x)Al_(x)N refractorylayer described herein has a value selected from Table I.

TABLE I Al Content of M_(1−x)Al_(x)N Nanolayer (at. %) Value of x inM_(1−x)Al_(x)N ≥0.4 ≥0.5 ≥0.55 ≥0.6 ≥0.64 ≥0.68 ≥0.69 ≥0.7 ≥0.750.6-0.85 0.65-0.8  0.7-0.8  0.7-0.85With a value of x selected from Table I, the refractory layer, in someembodiments, can exhibit hexagonal phase in an amount up to 35 weightpercent. For example, the refractory layer can include hexagonal phasein an amount greater than 3 weight percent and up to 30 weight percentfor x≥0.64 or x≥0.69. In some embodiments, the refractory layer hashexagonal phase content according to Table II.

TABLE II Hexagonal Phase Content of Refractory Layer Refractory LayerHexagonal Phase (wt. %)  0-35  3-30 20-35 25-35 20-30  1-10 1-5

Additionally, in some embodiments, the refractory layer can exhibit ahexagonal content in excess of 35 weight percent. Further, aM_(1−x)Al_(x)N refractory layer described herein includes a cubiccrystalline phase. In some embodiments, the cubic crystalline phase isthe sole crystalline phase of the M_(1−x)Al_(x)N refractory layer. Inembodiments wherein hexagonal phase is present in the M_(1−x)Al_(x)Nrefractory layer, cubic phase can constitute the balance of crystallineM_(1−x)Al_(x)N in the refractory layer. Cubic phase M_(1−x)Al_(x)N isgenerally desirable as it maintains high hardness and high temperatureoxidation resistance of the refractory layer.

Phase determination, including hexagonal phase determination, ofrefractory coatings described herein is determined using x-raydiffraction (XRD) techniques and the Rietveld refinement method, whichis a full fit method. The measured specimen profile and a calculatedprofile are compared. By variation of several parameters known to one ofskill in the art, the difference between the two profiles is minimized.All phases present in a coating layer under analysis are accounted forin order to conduct a proper Rietveld refinement.

A cutting tool comprising a refractory coating described herein can beanalyzed according to XRD using a grazing incidence technique requiringa flat surface. The cutting tool rake face or flank face can be analyzeddepending on cutting tool geometry. XRD analysis of coatings describedherein was completed using a parallel beam optics system fitted with acopper x-ray tube. The operating parameters were 45 KV and 40 MA.Typical optics for grazing incidence analysis included an x-ray mirrorwith 1/16 degree antiscatter slit and a 0.04 radian soller slit.Receiving optics included a flat graphite monochromator, parallel platecollimator and a sealed proportional counter. X-ray diffraction data wascollected at a grazing incidence angle selected to maximize coating peakintensity and eliminate interference peaks from the substrate. Countingtimes and scan rate were selected to provide optimal data for theRietveld analysis. Prior to collection of the grazing incidence data,the specimen height was set using x-ray beam splitting.

A background profile was fitted and peak search was performed on thespecimen data to identify all peak positions and peak intensities. Thepeak position and intensity data was used to identify the crystal phasecomposition of the specimen coating using any of the commerciallyavailable crystal phase databases.

Crystal structure data was input for each of the crystalline phasespresent in the specimen. Typical Rietveld refinement parameters settingsare:

-   -   Background calculation method: Polynomial    -   Sample Geometry: Flat Plate    -   Linear Absorption Coefficient: Calculated from average specimen        composition    -   Weighting Scheme: Against lobs    -   Profile Function: Pseudo-Voigt    -   Profile Base Width: Chosen per specimen    -   Least Squares Type: Newton-Raphson    -   Polarization Coefficient: 1.0        The Rietveld refinement typically includes:    -   Specimen Displacement: shift of specimen from x-ray alignment    -   Background profile selected to best describe the background        profile of the diffraction data    -   Scale Function: scale function of each phase    -   B overall: displacement parameter applied to all atoms in phase    -   Cell parameters: a, b, c and alpha, beta, and gamma    -   W parameter: describes peak FWHM

Any additional parameter to achieve an acceptable “Weighted R Profile”All Rietveld phase analysis results are reported in weight percentvalues.

The refractory layer comprising M_(1−x)Al_(x)N described herein hashardness of at least 25 GPa. Hardness values are determined according toISO 14577 with a Vickers indenter at an indentation depth of 0.25 μm. Insome embodiments, a refractory layer having a construction describedherein, including an x value selected from Table I and hexagonal phasecontent selected from Table II, has hardness according to Table III.

TABLE III Refractory Layer Hardness (GPa) Hardness, GPa ≥25 ≥27 ≥2825-35 25-30 26-32 27-35 28-35 30-35

In addition to hardness, the refractory layer comprising M_(1−x)Al_(x)Ncan have any thickness not inconsistent with the objectives of thepresent invention. The refractory layer, for example, can have athickness of 1 μm to 10 μm or 2 μm to 8 μm. In some embodiments, arefractory layer comprising M_(1−x)Al_(x)N has a thickness greater than5 μm. For example, a refractory layer having a construction describedherein, including an x value selected from Table I, hexagonal phasecontent selected from Table II and hardness selected from to Table III,can have a thickness selected from Table IV.

TABLE IV Refractory Layer Thickness (μm) Thickness μm 1-3  1-5  >5 ≥6 ≥7≥8 ≥9 ≥10  6-30 8-20 9-15Refractory layer thicknesses described herein were measured on a flanksurface of the cutting tool.

As described further herein, refractory layers comprising M_(1−x)Al_(x)Nin some embodiments, are operable to have thickness values selected fromTable IV while demonstrating residual compressive stress less than 2.5GPa. In some embodiments, for example, the refractory layer comprisingM_(1−x)Al_(x)N can have a residual compressive stress according to TableV and a thickness in excess of 5 μm.

TABLE V Refractory Layer Residual Compressive Stress ResidualCompressive Stress, GPa ≤2.2 ≤2.0 ≤1.5 ≤1.0 0.5 to 2.5 0.8 to 2.0 1.0 to1.5In the absence of a specific designation as being compressive, residualstress values described herein can be assigned a negative value toindicate the residual stress is compressive. As is understood by one ofskill in the art, residual stress, in the absence of a specificdesignation, is assigned positive values to indicate tensile stress andnegative values to indicate compressive stress.

For refractory layers comprising M_(1−x)Al_(x)N described herein, amodified Sin²Ψ method was used employing Seemann-Bohlin (S-B) focusinggeometry for determining residual stress and shear stress. See V.Valvoda, R. Kuzel, R. Cerny, D. S. Rafaja, J. Musil, C. Kadlec, A. J.Perry, Thin Solid Films 193/194 (1990) 401. According to this method,interplanar spacing of all measurable diffraction peaks with differentMiller (hkl) indices was determined using the grazing-incidence X-raydiffraction geometry. [Diffraction peaks of different (hkl) planes werecollected in a single 2θ scan with a fixed incident-beam angle to thespecimen.] Since diffraction planes produce different angles to thesample surface normal in the approach of Perry et al., sample tilting Ψis not necessary. Perry et al. provided that the angle Ψ actuallycorresponds to the Bragg angle θ minus the grazing angle γ(Ψ=θ−γ).Therefore, in a single 2θ scan, a range of Ψ angles is automaticallyselected when a number of Bragg peaks with different Miller indices aremeasured at different 2θ angles. The residual stress was then derivedfrom a plot of the lattice parameters calculated from different peaksvs. Sin²Ψ.

For refractory layers comprising M_(1−x)Al_(x)N wherein M is titanium,for example, residual stress and shear stress was determined by x-raydiffraction using the grazing incidence Sin²Ψ method with reference tomultiple (hkl) reflections of the AlTiN crystalline phase. Theinstrument used for residual stress determination was a PANalyticalXpert Pro MRD fitted with an Eulerian cradle for specimen manipulation.The x-ray source was a copper long fine focus x-ray tube operating at 45KV and 40 MA. The instrument was configured with parallel beam opticsfor the determination of the stress in the coatings. The incident opticsincluded an x-ray mirror and 0.04 soller slit. The receiving opticsincluded a 0.27 degree parallel plate collimator, a flat graphitemonochromator and a sealed proportional counter.

The (111), (200), (220), (311), (222), (331), (420), and (422)reflections of AlTiN were selected for the measurement of the residualstress levels. The grazing incidence angle was selected to minimize thesubstrate reflections while insuring that entire refractory layerthickness is included in the analysis. Data collection parameters forstep size and count time were adjusted for each (hkl) reflection toobtain adequate peak intensity for accurate determination of peakposition.

Peak data was then corrected for Absorption and Transparency using thefollowing equations:

Absorption  Correction                                $A = {\left\lbrack {1 - \frac{\tan\left( {\omega - \theta} \right)}{\tan\mspace{14mu}\theta}} \right\rbrack \times \left\lbrack {1 - e^{({{- {vt}} \times \frac{2\sin\;\theta \times {\cos{({\omega - \theta})}}}{{\sin^{2}\theta} - {\sin^{2}{({\omega - \theta})}}}})}} \right\rbrack}$Transparency  Correction                             ${\Delta 2\theta} = {\frac{180}{\pi} \times \frac{2\tau}{R} \times \frac{{\sin(\theta)}{\cos(\theta)}}{\sin(\omega)}}$${{with}\mspace{14mu}\tau} = {\frac{t}{\beta} \times \frac{{\left( {1 - \beta} \right) \times e^{- \beta}} - e^{- \beta}}{1 - e^{- \beta}}}$${{and}\mspace{14mu}\beta} = \frac{2\mu\; t\mspace{14mu}\sin\mspace{14mu}\theta\; \times {\cos\left( {\omega - \theta} \right)}}{{\sin^{2}\theta} - {\sin^{2}\left( {\omega - \theta} \right)}}$

where:

-   -   t=thickness of layer    -   μ=linear absorption coefficient (cm⁻¹)    -   θ=2Theta/2 (degrees)    -   (ω−θ)=omega offset angle (degrees)    -   Ψ=tilt angle (Psi stress) (degrees)    -   τ=information depth (microns)    -   R=Radius of goniometers (mm)        The peak data was corrected for Lorentz polarization using the        following equation:

Polarization  Correction${LP} = \frac{\cos^{2}2\theta_{mon} \times \cos^{2}2\theta}{\sin\;\theta}$2θ_(mon) = diffraction  angle  of  graphite  monochromatorThe Kα₂ peaks were removed using the Ladell model. Peak positions wererefined using a modified Lorentzian shape profile function.

The refractory layer residual stress was calculated from the generalequation:

$\frac{d_{\varphi\psi} - d_{0}}{d_{0}} = {{S_{1}\left( {\sigma_{1} + \sigma_{2}} \right)} + {\frac{1}{2}S_{2}\sigma_{\varphi}\sin^{2}\psi}}$

-   -   where σ_(φ)=σ₁ cos² φ+σ₂ som²φ    -   d_(φΨ)=lattice constant at angle φ and tilt Ψ    -   d_(o) =strain free lattice constant    -   φ=rotation angle    -   Ψ=specimen tilt    -   σ₁ & σ₂ =primary stress tensors in specimen surface    -   σ_(φ)=stress at φ rotation angle    -   S₁ & ½ S₂=X-ray elastic constants

$S_{1} = {{\frac{- \nu}{E}\mspace{14mu}\frac{1}{2}S_{2}} = \frac{1 + \nu}{E}}$For the present AlTiN analysis Poisson's Ratio (υ) was set to 0.20, andthe elastic modulus (E in GPa) was determined from nano-indentationanalysis conducted with a Fischerscope HM2000 in accordance with ISOstandard 14577 using a Vickers indenter. Indentation depth was set to0.25 μm. Residual stress analysis by XRD can be performed in a similarmanner on refractory layers comprising Cr_(1−x)Al_(x)N and/orZr_(1−x)Al_(x)N by selection of multiple (hkl) reflections appropriatefor these compositions, as known to one of skill in the art. Further,Poisson's Ratio (υ) and elastic moduli (E) for layers of Cr_(1−x)Al_(x)Nand/or Zr_(1−x)Al_(x)N can also be determined by nano-indentationanalysis as described herein.

A refractory layer comprising M_(1−x)Al_(x)N described herein candemonstrate a critical load (L_(c)) of at least 60 kgf. Critical loadcharacterizing adhesion of the refractory layer is determined accordingto the following protocol. A Rockwell Hardness Tester with superficialscales is employed having a Rockwell A or C brale indenter that is freeof cracks, chip, flaws and adherent surface debris. Also employed are aspot anvil (0.25 inch diameter) and flat anvil (2 inch diameter). Theappropriate pre-load (10 kg) for the indenter load being applied isselected. A flat surface of the coated substrate is selected andposition on the anvil below the brale indenter and elevating screw isadjusted to the required zero scale position. Indentation(s) are appliedat the desired superficial load (e.g. 60, 100, 150 kgf, etc.). Theelevating screw is released and the sample is laterally positioned forapplication of the next load. Indents are spaced to avoid interferenceeffects or contributions from neighboring indentations. The recommendedspacing distance is 3-5× the diameter of the indentation. Any debondedbut still adherent refractory layer can be removed by immersing thesample in an ultrasonic bath for several minutes. Alternatively, anadhesive tape can be used to remove debonded refractory layer. Theindented samples are examined for flaking and delamination along thesurface perimeter of the indent under optical microscope (10×-100×).Critical load (L_(c)) is reported at the load where coating flakingand/or delamination occur beyond the diameter of the indent. FIG. 9illustrates non-limiting reference examples of flaking of a PVD coatingunder the present adhesion test. A refractory layer comprisingM_(1−x)Al_(x)N, in some embodiments, exhibits an L_(c) selected fromTable VI.

TABLE VI Critical Load (L_(c)) of M_(1−x)Al_(x)N Refractory Layer  ≥60kgf ≥100 kgf ≥150 kgf

The refractory layer comprising M_(1−x)Al_(x)N and having properties ofTables I-VI herein, in some embodiments, is deposited as a singlecontinuous layer of M_(1−x)Al_(x)N. Alternatively, the refractory layeris deposited as a plurality of M_(1−x)Al_(x)N sublayers. Further,sublayers of other refractory material can be employed in conjunctionwith M_(1−x)Al_(x)N sublayers to form the refractory layer. In someembodiments, sublayers comprising one or more elements selected from thegroup consisting of aluminum and metallic elements of Groups IVB, VB andVIB of the Periodic Table and one or more non-metallic elements ofGroups IIIA, IVA, VA and VIA of the Periodic Table are employed with theM_(1−x)Al_(x)N sublayers to provide the refractory layer. M_(1−x)Al_(x)Nsublayers and sublayers of other refractory material can have anydesired individual thicknesses such that summation of the sublayerthicknesses is greater than 5 μm. In some embodiments, a M_(1−x)Al_(x)Nsublayer and/or sublayer of other refractory material has a thickness of50 nm to 5 μm.

Further, M_(1−x)Al_(x)N sublayers forming the refractory layer candemonstrate variances in residual compressive stress. For example,individual M_(1−x)Al_(x)N sublayer(s) having low residual compressivestress can be employed in conjunction with M_(1−x)Al_(x)N sublayer(s) ofhigher residual compressive stress to form the refractory layer havingan overall residual compressive stress of less than 2.5 GPa. Similarly,residual stress levels between M_(1−x)Al_(x)N sublayers and sublayers ofother refractory material can be varied to form the refractory layerhaving an overall residual compressive stress of less than 2.5 GPa. Insome embodiments, M_(1−x)Al_(x)N sublayer(s) having low residualcompressive stress can be employed in conjunction with sublayer(s) ofother refractory material of higher residual compressive stress, such asTiN, to form the refractory layer having an overall residual compressivestress of less than 2.5 GPa. Alternatively, sublayer(s) of otherrefractory material, such as TiN, can exhibit lower residual compressivestress than the M_(1−x)Al_(x)N sublayer(s) of the refractory layer. Inembodiments wherein sublayer residual compressive stress levels arevaried, at least 30 vol. % of the refractory layer is formed bysublayers having residual compressive stress less than 2.5 GPa. In someembodiments, at least 40 vol. % or at least 50 vol. % of the refractorylayer is formed by sublayers having residual compressive stress lessthan 2.5 GPa.

As set forth above in the description of the modified Sin²Ψ method forresidual stress analysis of the refractory layer, the grazing incidenceangle is set to minimize substrate reflections while insuring that theentire refractory layer thickness is included in the analysis.Therefore, for a refractory layer formed of M_(1−x)Al_(x)N sublayerswith optional sublayers of other refractory material, the residualcompressive stress analysis takes into account residual compressivestresses of the sublayers to yield a value of less than 2.5 GPa for therefractory layer. In some embodiments, for example, M_(1−x)Al_(x)Nsublayers of low residual compressive stress are alternated withM_(1−x)Al_(x)N sublayers of higher residual compressive stress to faunthe refractory layer, thereby providing residual stress gradient(s) inthe refractory layer. As described herein, M_(1−x)Al_(x)N sublayers oflow residual compressive stress can also be alternated with sublayers ofother refractory material of higher residual compressive stress to formthe refractory layer, thereby providing residual stress gradient(s) inthe refractory layer.

In addition to differing values of residual compressive stress,M_(1−x)Al_(x)N sublayers forming the refractory layer can demonstratediffering grain sizes. For example, M_(1−x)Al_(x)N sublayers of higherresidual compressive stress can display smaller average grain size thanM_(1−x)Al_(x)N sublayers of lower residual compressive stress, therebyestablishing grain size gradient(s) in the refractory layer. Grain sizeof a M_(1−x)Al_(x)N sublayer can be determined in accordance with theXRD technique described below.

Moreover, M_(1−x)Al_(x)N sublayers forming the refractory layer can havesubstantially the same value for x or differing values for x. Forexample, M_(1−x)Al_(x)N sublayers can have substantially the same valuefor x selected from Table I or differing values of x selected from TableI. In having differing values, a compositional gradient of aluminum canbe established in the refractory layer.

Additionally, the refractory layer can be deposited as a plurality ofsublayer groups, a sublayer group comprising a cubic phase formingnanolayer and an adjacent nanolayer of the M_(1−x)Al_(x)N. A cubic phaseforming nanolayer can comprise a cubic nitride, cubic carbide or cubiccarbonitride of one or more metallic elements selected from the groupconsisting of yttrium, silicon and metallic elements of Groups IIIA,IVB, VB and VIB of the Periodic Table. In some embodiments, for example,a cubic phase forming nanolayer is selected from the group consisting oftitanium nitride, titanium carbide, zirconium nitride, tantalum carbide,niobium carbide, niobium nitride, hafnium nitride, hafnium carbide,vanadium carbide, vanadium nitride, chromium nitride, aluminum titaniumnitride, cubic boron nitride, aluminum chromium nitride, titaniumcarbonitride and aluminum titanium carbonitride. Further, in someembodiments, a cubic phase forming nanolayer displays hexagonal phase inaddition to the cubic phase. A cubic phase forming nanolayer of AlTiN,AlCrN and/or AlZrN for example, can demonstrate low amounts of hexagonalphase.

Thickness of a sublayer group comprising a M_(1−x)Al_(x)N nanolayerdeposited on a cubic phase forming nanolayer can generally range from 5nm to 50 nm. In some embodiments, a sublayer group has a thickness inthe range of 10 nm to 40 nm. Thickness of an individual M_(1−x)Al_(x)Nnanolayer can range from 5 nm to 30 nm with the thickness of anindividual cubic phase forming nanolayer ranging from 2 nm to 20 nm.

Further, nanolayers of M_(1−x)Al_(x)N and cubic phase formingcompositions can demonstrate grain size distributions of 1 nm to 15 nm.Grain size distributions of nanolayers described herein can bedetermined according to X-ray diffraction (XRD) techniques. Crystalliteor grain size determination by XRD is the result of ascertaining theintegral peak width and peak shape of the diffracted sample pattern. Theanalysis of grain size by the Rietveld method is based on the change ofthe parameters to determine the sample peak profile compared to astandard peak profile. The profile parameters depend on the instrumentsettings used for data collection and on the profile function used forrefinement.

XRD analysis is completed using a grazing incidence technique and XRDinstrumentation and settings described below for hexagonal phasedetermination. A size-strain standard is measured. NIST standard SRM660b Line Position and Line Shape Standard for Powder Diffraction isused for this purpose. A high quality scan is obtained for the standard(e.g. ≥140 degrees 2θ) with optics tuned for resolution. The standardstructure is loaded and refined. Suitable Rietveld refinement parametersare provided in the description of hexagonal phase determination below.The Rietveld refinement for crystallite size depends on the profilefunction used to identify the peaks and typically includes:

U parameter describes peak FWHM V parameter describes peak FWHM Wparameter describes peak FWHM Peak Shape 1 describes the peak shapefunction parameter Peak Shape 2 describes the peak shape functionparameter Peak Shape 3 describes the peak shape function parameterAsymmetry describes peak asymmetry for the Rietveld or Howard Model

Refinement of the standard defines the peak profile parameters strictlydue to the instrument. This refinement is saved as the instrument peakbroadening standard. The unknown sample data is imported into thisstandard refinement and then has peak profile refinement completed usingthe same parameters as the size standard. The results of the refinementof the peak profiles on the unknown sample determine the crystallitesize.

FIG. 2 is a schematic of a coated cutting tool according to oneembodiment described herein. The coated cutting tool (20) of FIG. 2comprises a cutting tool substrate (21) and a coating (22) adhered tothe substrate (21). The coating (22) is formed of a refractory layer(23) having a plurality of sublayer groups (24). A sublayer group (24)comprises a cubic phase forming nanolayer (25) and an adjacent nanolayerof M_(1−x)Al_(x)N (26). The sublayer groups (24) are repeated or stackedto provide the refractory layer (23) the desired thickness.Alternatively, the refractory layer (23) is formed of a single layer ofM_(1−x)Al_(x)N not comprising sublayer groups.

FIG. 10 is a schematic of a coated cutting tool according to oneembodiment described herein. The coated cutting tool (50) of FIG. 10comprises a cutting tool substrate (51) and a coating (52) adhered tothe substrate (50). The coating is formed of a single, monolithicrefractory layer (53) of M_(1−x)Al_(x)N, wherein x is selected fromTable I herein. Further, the M_(1−x)Al_(x)N refractory layer (53) canhave any combination of properties selected from Tables II-VI herein. Insome embodiments, for example, the M_(1−x)Al_(x)N refractory layer (53)has a value of x≥0.68 or ≥0.69 and a hardness of at least 25 GPa.

The refractory layer comprising M_(1−x)Al_(x)N can be adhered directlyto the substrate as illustrated in FIGS. 2 and 10. Alternatively, therefractory layer can be adhered to the substrate by one or moreintermediate refractory layers. Intermediate refractory layer(s) of thecoating can comprise one or more metallic elements selected from thegroup consisting of aluminum and metallic elements of Groups IVB, VB andVIB of the Periodic Table and one or more non-metallic elements selectedfrom the group consisting of nonmetallic elements of Groups IIIA, IVA,VA and VIA of the Periodic Table. For example, in some embodiments, oneor more intermediate layers of TiN, AlTiN, TiC, TiCN or Al₂O₃ can bepositioned between the cutting tool substrate and the refractory layer.Intermediate layer(s) can have any desired thickness not inconsistentwith the objectives of the present invention. In some embodiments, anintermediate layer has a thickness in the range of 100 nm to 5 μm.

Moreover, the coating can further comprise one or more outer refractorylayers over the refractory layer comprising M_(1−x)Al_(x)N. Outerrefractory layer(s) of the coating can comprise one or more metallicelements selected from the group consisting of aluminum and metallicelements of Groups IVB, VB and VIB of the Periodic Table and one or morenon-metallic elements selected from the group consisting of nonmetallicelements of Groups IIIA, IVA, VA and VIA of the Periodic Table. Forexample, in some embodiments, one or more outer refractory layers ofTiN, AlTiN, TiC, TiCN or Al₂O₃ can be positioned over the refractorylayer of M_(1−x)Al_(x)N. Outer refractory layer(s) can have any desiredthickness not inconsistent with the objectives of the present invention.In some embodiments, an outer refractory layer has a thickness in therange of 100 nm to 5 μm.

FIG. 3 illustrates a schematic of a coated cutting tool according to oneembodiment described herein. The coated cutting tool (30) of FIG. 3comprises a cutting tool substrate (31) and a coating (32) adhered tothe substrate (31). The coating (32) comprises a refractory layer (33)having a plurality of sublayer groups (34). As in FIG. 2, a sublayergroup (34) comprises a cubic phase forming nanolayer (35) and anadjacent nanolayer of M_(1−x)Al_(x)N (36). The sublayer groups (34) arerepeated or stacked to provide the refractory layer (33) the desiredthickness. An intermediate layer (37) is positioned between the cuttingtool substrate (31) and the refractory layer (33). In some embodiments,the intermediate layer (37) is a single layer. Alternatively, theintermediate layer (37) can adopt a multilayer structure.

II. Methods of Making Coated Cutting Tools

In another aspect, methods of making coated cutting tools are describedherein. A method of making a coated cutting tool comprises providing asubstrate and depositing over a surface of the cutting tool substrate bycathodic arc deposition a coating comprising a refractory layerincluding M_(1−x)Al_(x)N wherein x≥0.4 and M is titanium, chromium orzirconium, the refractory layer having a thickness greater than 5 μm, ahardness of at least 25 GPa and a residual compressive stress less than2.5 GPa.

The refractory layer comprising M_(1−x)Al_(x)N wherein x≥0.4 and M istitanium, chromium or zirconium can have any compositional parameters,structure and/or properties described for the refractory layer inSection I hereinabove. The refractory layer of M_(1−x)Al_(x)N, forexample, can have a value of x selected from Table I herein, a hexagonalphase content selected from Table II herein, hardness selected formTable III herein, thickness selected from Table IV herein and residualcompressive stress selected from Table V herein.

The refractory layer can be deposited as a single continuous layerM_(1−x)Al_(x)N. In some embodiments, for example, a single continuouslayer of M_(1−x)Al_(x)N having composition and properties selected fromTables I-V herein is deposited by cathodic arc deposition using one ormore cathodes having diameter less than about 80 mm. In someembodiments, each cathode of the cathodic arc deposition apparatus has adiameter less than 80 mm. Further, composition of the cathodes havingdiameter less than 80 mm can be chosen to limit hexagonal phaseformation in the refractory layer of M_(1−x)Al_(x)N. For example,cathode composition can be chosen to have an aluminum (Al) contentgreater than 0.5. In some embodiments, cathode(s) having diameter lessthan 80 mm and composition of Ti_(0.33)Al_(0.67) are employed to limithexagonal phase formation in the refractory layer of M_(1−x)Al_(x)N.Such as result is counterintuitive given that high Al content cathodescan facilitate hexagonal phase formation.

Alternatively, the single continuous layer of M_(1−x)Al_(x)N can bedeposited with a reduction in magnitude of one or more arc steeringmagnetic fields. As known to one of skill in the art, electromagnetsand/or permanent magnets of various strengths can be positioned behindcathodes to steer movement of the arc spots on the cathodes. Accordingto some embodiments described herein, reduction in magnitude of one ormore arc steering magnetic fields can produce refractory layer(s) ofM_(1−x)Al_(x)N having compositional parameters and properties describedin Section I above. Reduction in magnitude of one or more arc steeringmagnetic fields can be administered by selection of weakelectromagnet(s) for positioning behind cathode(s) of the depositionapparatus. For example, when using INNOVA cathodic arc depositionapparatus from OC Oerlikon Balzers AG, a reduction in arc steeringmagnetic field can be achieved by positioning a weak electromagnet (e.g.Mag 6) behind one or more cathodes of the apparatus. The weakelectromagnet(s) can be run at a current of 0.1 A to 0.8 A. In someembodiments, the current of the weak electromagnet is 0.2-0.5 A. It iscontemplated herein that a variety of weak electromagnet configurationsare operable to provide the required reduction in magnitude of one ormore arc steering fields to realize M_(1−x)Al_(x)N refractory layershaving compositions and properties described herein.

A reduction in magnitude of one or more arc steering fields can also beadministered with various permanent magnet configurations. For example,magnetic disc number and/or size behind cathodes of the depositionapparatus can be reduced or otherwise altered to effectuate sufficientreduction in magnitude of one or more arc steering fields for producingrefractory layer(s) described herein. It is within the purview of one ofskill in the art to employ the foregoing principles when presented withcathodic arc deposition apparatus of varying construction to providesuitable reduction in magnitude of arc steering field(s).

Further, the single continuous layer of M_(1−x)Al_(x)N havingcomposition and properties described in Section I can be deposited witha cathodic arc deposition apparatus comprising at least one anode havingan annular extension. In some embodiments, each anode in the cathodicarc deposition apparatus has an annular extension. The annular extensionof the anode can partially overlap with a frontal surface of theassociated cathode. Additionally, a confinement ring can be positionedbetween the cathode and anodic annular extension. FIG. 4 is across-sectional schematic of an anode configuration employing an annularextension according to one embodiment described herein. As illustratedin FIG. 4, the anode (40) encircles the cathode (41) in the cathodic arcconstruction. The annular extension (43) projects above the frontalsurface (44) of the anode (40). A confinement ring (45) is positionedbetween the annular extension (43) and the cathode (41).

The refractory layer can also be deposited as a plurality ofM_(1−x)Al_(x)N sublayers. Thickness and residual compressive stress ofthe individual M_(1−x)Al_(x)N sublayers can be controlled by adjustingtarget evaporation rates, bias voltages and/or other PVD parameters.

As described herein, the refractory layer can also be deposited as aplurality of sublayer groups, a sublayer group comprising a cubic phaseforming nanolayer and an adjacent nanolayer of the M_(1−x)Al_(x)N.Compositional parameters of suitable cubic phase forming nanolayers aredescribed in Section I herein. Further, cubic phase forming nanolayersand nanolayers of M_(1−x)Al_(x)N can demonstrate thicknesses and grainsize distributions provided in Section I. Thickness of cubic phaseforming nanolayers and M_(1−x)Al_(x)N nanolayers can be controlled byadjusting target evaporation rates among other PVD parameters.

Bias voltages employed during cathodic arc deposition of theM_(1−x)Al_(x)N refractory layer can generally range from −20V to −80 V.As described herein, at least a portion of the refractory layercomprising M_(1−x)Al_(x)N can be deposited at a bias of less than −40 V.For example, the bias can be in the range of −20 V to less than −40 V.In some embodiments, the entire refractory layer is deposited at a biasof less than −40V. As further discussed in the Examples presentedherein, it has been surprisingly found that use of cathode(s) havingdiameter less than 80 mm, use of anodes having an annular extensionand/or reducing magnitude of one or more arc steering magnetic fieldscan limit hexagonal phase formation in the refractory layer formed ofM_(1−x)Al_(x)N to 0-35 weight percent at deposition bias voltages less−40V. Similarly, deposition of the refractory layer comprisingM_(1−x)Al_(x)N as a plurality of sublayer groups, including cubic phaseforming nanolayers, can also limit hexagonal phase formation to 0-35weight percent at bias voltages less than −40 V. In some embodiments,the foregoing cathodic arc deposition methods limit hexagonal phaseformation to greater than 15 weight percent and up to 35 weight percentat bias voltages less than −40 V. The ability to limit hexagonal phaseformation permits the deposited refractory layer comprisingM_(1−x)Al_(x)N to maintain desirable hardness. Further, bias voltagesless than −40 V can limit excessive residual compressive stress in therefractory layer of M_(1−x)Al_(x)N. Therefore, refractory layerscomprising M_(1−x)Al_(x)N having desirable hardness can be deposited atthicknesses not previously realized. When coupled with values for x≥0.4,refractory layers comprising M_(1−x)Al_(x)N can also demonstratedesirable oxidation resistance in high temperature cutting applications.

In another embodiment, a method of making a coated cutting tooldescribed herein comprises providing a cutting tool substrate anddepositing a coating over a surface of the substrate, the coatingcomprising a refractory layer including M_(1−x)Al_(x)N wherein x≥0.64and M is titanium, chromium or zirconium, the refractory layer havinghardness of at least 25 GPa, wherein the refractory layer is depositedwith a cathodic arc deposition apparatus comprising at least one anodehaving an annular extension. In some embodiments, each anode in thecathodic arc deposition apparatus has an annular extension. The annularextension of the anode can partially overlap with a frontal surface ofthe associated cathode. Additionally, a confinement ring can bepositioned between the cathode and anodic annular extension. Forexample, in some embodiments, an anode configuration having an annularextension is illustrated in FIG. 4 herein.

Additionally, the cathodic arc deposition apparatus of methods describedherein can employ cathode(s) having increased aluminum content. In someembodiments, for example, one or more cathodes of the cathodic arcdeposition apparatus have a construction selected from Table VII.

TABLE VII Cathode Construction Al₇₀Ti₃₀ Al₇₃Ti₂₇ Al₇₅Ti₂₅ Al₈₀Ti₂₀

For example, cathodes of Table VII, for example, can be used inconjunction with an annular extension when depositing the refractorylayer. In another example, cathodes of Table VII can be employed whenthe refractory layer is deposited as a plurality of sublayer groups. Asdescribed herein, a sublayer group comprises a cubic phase formingnanolayer and an adjacent nanolayer of the M_(1−x)Al_(x)N. Compositionalparameters of suitable cubic phase forming nanolayers are described inSection I herein. Further, cubic phase forming nanolayers and nanolayersof M_(1−x)Al_(x)N can demonstrate thicknesses and grain sizedistributions provided in Section I. Thickness of cubic phase formingnanolayers and M_(1−x)Al_(x)N nanolayers can be controlled by adjustingtarget evaporation rates among other PVD parameters.

Bias voltages for the cathodic arc deposition apparatus employing atleast one anode having an annular extension can generally range from−40V to −80V. In some embodiments, bias voltage is set to −40V, −60V or−80V. Additionally, the bias voltage can be varied in the range of −40Vto −80V during deposition of the M_(1−x)Al_(x)N refractory layer.

The refractory layer of M_(1−x)Al_(x)N deposited by a cathodic arcdeposition apparatus comprising at least one anode having an annularextension can have any construction and properties described in SectionI herein, including any combination of properties listed in Tables I-VI.In some embodiments, for example, the M_(1−x)Al_(x)N refractory layerhas a value of x≥0.68, x≥0.69 or ≥0.7 and hardness of at least 25 GPa orat least 27 GPa.

These and other embodiments are further illustrated in the followingnon-limiting examples.

EXAMPLE 1 Coated Cutting Tool

A cutting tool was coated with a refractory layer formed of a pluralityof sublayer groups, each sublayer group comprising a cubic phase formingnanolayer of TiN and an adjacent nanolayer of M_(1−x)Al_(x)N, wherein Mwas titanium and x≥0.6. The refractory layer was deposited by cathodicarc evaporation on a cemented carbide (WC-6 wt. % Co) indexable insertsubstrate [ANSI standard geometry CNGP433] at a substrate temperature of550-600° C., biasing voltage −20V, nitrogen partial pressure of 4.0-4.5Pa and argon partial pressure of 0.5-1.0 Pa. INNOVA PVD apparatus fromOC Oerlikon Balzers AG was employed for the coating deposition. Cubicphase forming nanolayers of TiN and nanolayers of Ti_(1−x)Al_(x)N(x≥0.6) were deposited in alternating succession using cathodeconstructions of Table VIII to provide the refractory layer.

TABLE VIII Cathode Constructions Cubic Phase Ti_(1−x)Al_(x)N FormingNanolayer Nanolayer Example Cathode Cathode 1 Ti Ti_(0.33)Al_(0.67)Properties of the resulting refractory layer are provided in Table IX.Hexagonal phase content, residual compressive stress and hardness of therefractory layer were determined according to their respectivetechniques described in Section I herein.

TABLE IX Refractory Layer Properties Residual Refractory HardnessCompressive Hexagonal Phase Layer Example (GPa) Stress (MPa) (wt. %)Thickness (μm) 1 28.7 1950 32.7 7.1As provided in Table IX, the refractory layer demonstrated highhardness, low residual compressive stress and high thickness. Further,FIG. 5 is an X-ray diffractogram of the refractory coating of Example 1.As illustrated in the diffractogram, TiAlN of the refractory layer waspresent in cubic and hexagonal form.

EXAMPLE 2 Coated Cutting Tool

A coated cutting tool was made in accordance with Example 1, thedifferences being the bias voltage was increased to −45 V and thecemented carbide substrate geometry was ANSI standard geometry CNGP432.Properties of the resulting refractory layer are provided in Table X.Hexagonal phase content, residual compressive stress and hardness of therefractory layer were determined according to their respectivetechniques described in Section I herein.

TABLE X Refractory Layer Properties Residual Hexagonal RefractoryCompressive Phase Layer Example Hardness (GPa) Stress (MPa) (wt. %)Thickness (μm) 2 31.0 1081 32.2 6.3Similar to Example 1, the coated cutting tool of Example 2 demonstratedhigh hardness, low residual compressive stress and high thickness. FIG.6 is an X-ray diffractogram of the refractory coating of Example 2.

EXAMPLE 3 Coated Cutting Tool

A cutting tool was coated with a single, monolithic refractory layer ofTi_(1−x)Al_(x)N (x>0.6). The Ti_(1−x)Al_(x)N refractory layer wasdeposited by cathodic arc deposition on a cemented carbide (WC-6 wt. %Co) indexable insert substrate [ANSI standard geometry SNG433] at asubstrate temperature of 550-600° C., biasing voltage −30V, nitrogenpartial pressure of 4.0-4.5 Pa and argon partial pressure of 0.5-1.0 Pa.INNOVA cathodic arc apparatus from OC Oerlikon Balzers AG was employedfor the refractory layer deposition. Cathode composition wasTi_(0.33)Al_(0.67) and anodes of the apparatus employed annularextensions. The INNOVA cathodic arc apparatus, for example, was run inthe Advanced Plasma Optimizer (APO) configuration incorporating annularextensions for the anodes therein. Properties of the resultingrefractory layer are provided in Table XI. Hexagonal phase content,residual compressive stress and hardness of the refractory layer weredetermined according to their respective techniques described in SectionI herein.

TABLE XI Refractory Layer Properties Residual Hexagonal RefractoryCompressive Phase Layer Example Hardness (GPa) Stress (MPa) (wt. %)Thickness (μm) 3 29.4 2053 0 8.1As provided in Table XI, the refractory layer demonstrated highhardness, low residual compressive stress and high thickness. FIG. 7 isan X-ray diffractogram of the refractory coating of Example 3. Asprovided in FIG. 7, TiAlN of the refractory layer was single-phasecubic. Moreover, the TiAlN refractory layer of this Example did notemploy cubic phase forming layers rendering it structurally divergentfrom Examples 1 and 2 herein.

EXAMPLE 4 Coated Cutting Tool

A cutting tool was coated with a single, monolithic refractory layer ofTi_(1−x)Al_(x)N (x>0.6). The Ti_(1−x)Al_(x)N refractory layer wasdeposited by cathodic arc deposition on a cemented carbide (WC-6 wt. %Co) indexable insert substrate [ANSI standard geometry CNGP432] at asubstrate temperature of 550-600° C., biasing voltage −30V, nitrogenpartial pressure of 4.0-4.5 Pa and argon partial pressure of 0.5-1.0 Pa.INNOVA cathodic arc apparatus from OC Oerlikon Balzers AG was employedfor the refractory layer deposition. Cathode composition wasTi_(0.33)Al_(0.67) and weak electromagnets (e.g. Mag 6) were positionedbehind the cathodes to produce arc steering magnetic fields with reducedmagnitude. Current for the electromagnets was set in the range of0.2-0.4 A.

Properties of the resulting refractory layer are provided in Table XII.Hexagonal phase content, residual compressive stress and hardness of therefractory layer were determined according to their respectivetechniques described in Section I herein.

TABLE XII Refractory Layer Properties Residual Hexagonal RefractoryCompressive Phase Layer Example Hardness (GPa) Stress (MPa) (wt. %)Thickness (μm) 4 26.4 838 0 7.8As provided in Table XII, the refractory layer demonstrated highhardness, low residual compressive stress and high thickness. FIG. 8 isan X-ray diffractogram of the refractory coating of Example 4. Asprovided in FIG. 8, TiAlN of the refractory layer was single-phasecubic. Moreover, the TiAlN refractory layer of this Example did notemploy cubic phase forming layers rendering it structurally divergentfrom Examples 1 and 2 herein.

EXAMPLE 5 Coated Cutting Tools

A cutting tool (5) was coated with a single, monolithic refractory layerof Ti_(1−x)Al_(x)N (x=0.64). The Ti_(1−x)Al_(x)N refractory layer wasdeposited by cathodic arc deposition on a cemented carbide (WC-6 wt. %Co) indexable insert substrate [ANSI standard geometry SNG433] at asubstrate temperature of 550-600° C., biasing voltage −40V, nitrogenpartial pressure of 4.0-4.5 Pa and argon partial pressure of 0.5-1.0 Pa.INNOVA cathodic arc apparatus from OC Oerlikon Balzers AG was employedfor the refractory layer deposition. Cathode composition wasTi_(0.30)Al_(0.70) and anodes of the apparatus employed annularextensions. The INNOVA cathodic arc apparatus, for example, was run inthe Advanced Plasma Optimizer (APO) configuration incorporating annularextensions for the anodes therein. Two additional cutting tools (6, 7)were coated according to the protocol of this Example 5, the soledifference being cutting tool (6) was produced at a bias of −60V andcutting tool (7) was produced at a bias of −80V. Properties of theresulting refractory layers are provided in Table XIII. Hardness,hexagonal phase content and critical load of the refractory layers weredetermined according to their respective techniques described in SectionI herein.

TABLE XIII Refractory Layer Properties Critical Hexagonal RefractoryLoad (L_(c)) Phase Layer Example 5 Hardness (GPa) kgf (wt. %) Thickness(μm) 5 29.3 >150 <5 2.4 6 29.7 >150 <5 2.5 7 29.7 >150 <5 2.5FIG. 11 is an X-ray diffractogram of the Ti_(1−x)Al_(x)N coating ofcutting tool (1) of Example 5. As illustrated in FIG. 11, theTi_(1−x)Al_(x)N coating exhibited cubic and hexagonal crystallinephases.

EXAMPLE 6 Coated Cutting Tools

A cutting tool (8) was coated with a single, monolithic refractory layerof Ti_(1−x)Al_(x)N (x=0.67). The Ti_(1−x)Al_(x)N refractory layer wasdeposited by cathodic arc deposition on a cemented carbide (WC-6 wt. %Co) indexable insert substrate [ANSI standard geometry SNG433] at asubstrate temperature of 550-600° C., biasing voltage −40V, nitrogenpartial pressure of 4.0-4.5 Pa and argon partial pressure of 0.5-1.0 Pa.INNOVA cathodic arc apparatus from OC Oerlikon Balzers AG was employedfor the refractory layer deposition. Cathode composition wasTi_(0.27)A_(0.73) and anodes of the apparatus employed annularextensions. The INNOVA cathodic arc apparatus was run in the AdvancedPlasma Optimizer (APO) configuration incorporating annular extensionsfor the anodes therein. Two additional cutting tools (9, 10) were coatedaccording to the protocol of this Example 6, the sole difference beingcutting tool (9) was produced at a bias of −60V and cutting tool (10)was produced at a bias of −80V. Properties of the resulting refractorylayers are provided in Table XIV. Hardness and critical load of therefractory layers were determined according to their respectivetechniques described in Section I herein.

TABLE XIV Refractory Layer Properties Critical Load (L_(c)) RefractoryLayer Example 6 Hardness (GPa) kgf Thickness (μm) 8 26.0 >150 2.7 927.2 >150 2.5 10 28.8 >150 2.5Cubic and hexagonal phases were present in the Ti_(0.33)Al_(0.67)Nrefractory layer of cutting tools 8-10.

EXAMPLE 7 Coated Cutting Tools

A cutting tool (11) was coated with a single, monolithic refractorylayer of Ti_(1−x)Al_(x)N (x=0.7). The Ti_(1−x)Al_(x)N refractory layerwas deposited by cathodic arc deposition on a cemented carbide (WC-6 wt.% Co) indexable insert substrate [ANSI standard geometry SNG433] at asubstrate temperature of 550-600° C., biasing voltage −40V, nitrogenpartial pressure of 4.0-4.5 Pa and argon partial pressure of 0.5-1.0 Pa.INNOVA cathodic arc apparatus from OC Oerlikon Balzers AG was employedfor the refractory layer deposition. Cathode composition wasTi_(0.25)A_(0.75) and anodes of the apparatus employed annularextensions. The INNOVA cathodic arc apparatus was run in the AdvancedPlasma Optimizer (APO) configuration incorporating annular extensionsfor the anodes therein. Two additional cutting tools (12, 13) werecoated according to the protocol of this Example 7, the sole differencebeing cutting tool (12) was produced at a bias of −60V and cutting tool(13) was produced at a bias of −80V. Properties of the resultingrefractory layers are provided in Table XV. Hardness, critical load andhexagonal phase of the refractory layers were determined according totheir respective techniques described in Section I herein.

TABLE XV Refractory Layer Properties Critical Refractory Hexagonal Load(L_(c)) Layer Phase Example 7 Hardness (GPa) kgf Thickness (μm) (wt. %)11 25.0 >150 2.6 <30 12 26.9 >150 2.4 <30 13 26.5 >150 2.8 <30The deposited Ti_(1−x)Al_(x)N coatings exhibited less than 30 wt. %hexagonal phase with the remainder crystalline phase being cubic.

EXAMPLE 8 Coated Cutting Tools

A cutting tool (14) was coated with a single, monolithic refractorylayer of Ti_(1−x)Al_(x)N (x=0.76). The Ti_(1−x)Al_(x)N refractory layerwas deposited by cathodic arc deposition on a cemented carbide (WC-6 wt.% Co) indexable insert substrate [ANSI standard geometry SNG433] at asubstrate temperature of 550-600° C., biasing voltage −60V, nitrogenpartial pressure of 4.0-4.5 Pa and argon partial pressure of 0.5-1.0 Pa.INNOVA cathodic arc apparatus from OC Oerlikon Balzers AG was employedfor the refractory layer deposition. Cathode composition wasTi_(0.20)Al_(0.80) and anodes of the apparatus employed annularextensions. The INNOVA cathodic arc apparatus was run in the AdvancedPlasma Optimizer (APO) configuration incorporating annular extensionsfor the anodes therein. An additional cutting tool (14) was coatedaccording to the protocol of this Example 8, the sole difference beingcutting tool (14) was produced at a bias of −80V. Properties of theresulting refractory layers are provided in Table XVI. Hardness andcritical load of the refractory layers were determined according totheir respective techniques described in Section I herein.

TABLE XVI Refractory Layer Properties Critical Load (L_(c)) RefractoryLayer Example 8 Hardness (GPa) kgf Thickness (μm) 13 25.4 >150 2.7 1426.1 >150 2.7The deposited Ti_(1−x)Al_(x)N refractory layers of cutting tools (13 and14) exhibited cubic and hexagonal crystalline phases.

Various embodiments of the invention have been described in fulfillmentof the various objectives of the invention. It should be recognized thatthese embodiments are merely illustrative of the principles of thepresent invention. Numerous modifications and adaptations thereof willbe readily apparent to those skilled in the art without departing fromthe spirit and scope of the invention.

That which is claimed is:
 1. A method of making a coated cutting toolcomprising: providing a cutting tool substrate; and depositing a coatingover a surface of the substrate, the coating comprising a refractorylayer including M_(1−x)Al_(x)N wherein x≥0.4 and M is titanium, chromiumor zirconium, the refractory layer including a cubic crystalline phase,wherein the coating is deposited with a cathodic arc depositionapparatus comprising at least one cathode having diameter less than 80mm.
 2. The method of claim 1, wherein x≥0.68.
 3. The method of claim 1,wherein x≥0.69.
 4. The method of claim 1, wherein 0.7≤x≤0.85.
 5. Themethod of claim 1, wherein the refractory layer has an L_(c) of at least100 kg.
 6. The method of claim 1, wherein the refractory layer has anL_(c) of at least 150 kg.
 7. The method of claim 4, wherein therefractory layer has less than 15 weight percent hexagonal phase.
 8. Themethod of claim 1, wherein the refractory layer is deposited directly onthe substrate.
 9. The method of claim 1, wherein the refractory layer isdeposited on an intermediate refractory layer.
 10. The method of claim9, wherein the intermediate refractory layer comprises one or moremetallic elements selected from the group consisting of aluminum andmetallic elements of Groups IVB, VB and VIB of the Periodic Table andone or more non-metallic elements of Groups IIIA, IVA, VA and VIA of thePeriodic Table.
 11. The method of claim 1, wherein each cathode of thecathodic arc deposition apparatus has a diameter less than 80 mm. 12.The method of claim 1, wherein the cathode has composition of Al₇₀Ti₃₀.13. The method of claim 1, wherein the cathode has a composition ofAl₇₃Ti₂₇.
 14. The method of claim 1, wherein the cathode has acomposition of Al₇₅Ti₂₅.
 15. The method of claim 4, wherein the cathodehas a composition of Al₈₀Ti₂₀.
 16. The method of claim 1, wherein therefractory has hardness of at least 25 GPa.
 17. The method of claim 1,coating further comprises one or more outer layers over the refractorylayer.
 18. The method of claim 17, wherein the one or more outer layerscomprise one or more metallic elements selected from the groupconsisting of aluminum and metallic elements of Groups IVB, VB and VIBof the Periodic Table and one or more non-metallic elements of GroupsIIIA, IVA, VA and VIA of the Periodic Table.
 19. The method of claim 1,wherein the refractory layer has thickness of 1-5 μm.
 20. The method ofclaim 1, wherein the cutting tool substrate is formed of cementedcarbide, carbide, ceramic or steel.